Product overview
- Product number
- DMN2022UFDF-13
- Manufacturer
- Diodes Incorporated
- product description
- MOSFET N-CH 20V 7.9A 6UDFN
Documents and media
- Datasheets
- DMN2022UFDF-13
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.9A (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.5V, 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 907 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UDFN Exposed Pad
- Part Status :
- Active
- Power Dissipation (Max) :
- 660mW (Ta)
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 4A, 4.5V
- Supplier Device Package :
- U-DFN2020-6 (Type F)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
product description
MOSFET N-CH 20V 7.9A 6UDFN