Datasheets

SQJ481EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerPAK® SO-8

Part Status :

Active

Power Dissipation (Max) :

45W (Tc)

Rds On (Max) @ Id, Vgs :

80mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA