Datasheets

FDD6796A

Current - Continuous Drain (Id) @ 25°C :

20A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1780 pF @ 13 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

3.7W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs :

5.7mOhm @ 20A, 10V

Supplier Device Package :

TO-252, (D-Pak)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA