Product overview
Documents and media
- Datasheets
- SI5513CDC-T1-E3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A, 3.7A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 285pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SMD, Flat Lead
- Part Status :
- Active
- Power - Max :
- 3.1W
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 4.3A, 4.5V
- Supplier Device Package :
- 1206-8 ChipFET™
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
product description
MOSFET N/P-CH 20V 4A 1206-8
