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Product overview

Product number
FDS3890
Manufacturer
onsemi
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET 2N-CH 80V 4.7A 8-SO

Documents and media

Datasheets
FDS3890

Product Details

Current - Continuous Drain (Id) @ 25°C :
4.7A
Drain to Source Voltage (Vdss) :
80V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 40V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Part Status :
Active
Power - Max :
900mW
Rds On (Max) @ Id, Vgs :
44mOhm @ 4.7A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
4V @ 250µA

product description

MOSFET 2N-CH 80V 4.7A 8-SO

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